Journal of Semiconductors(2010年03期)
半導(dǎo)體學(xué)報(bào)(英文版)

目 錄

• First-principle study on anatase TiO_2 codoped with nitrogen and ytterbium
• Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films
• Grain boundary layer behavior in ZnO/Si heterostructure
• Fluid model of inductively coupled plasma etcher based on COMSOL
• Synthesis and optical properties of nanostructured Ce(OH)_4
• White light photoluminescence from ZnS films on porous Si substrates
• Characteristics of GaN grown on 6H-SiC with different AIN buffers
• High performance AlGaN/GaN HEMTs with 2.4μm source-drain spacing
• Insulated gate bipolar transistor with trench gate structure of accumulation channel
• Impact of doped boron concentration in emitter on high-and low-dose-rate damage in lateral PNP transistors
• Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate
• A new static induction thyristor with high forward blocking voltage and excellent switching performances
• Light-current characteristics of vertical-cavity surface-emitting lasers with external optical feedback
• High contrast ratio,high uniformity multiple quantum well spatial light modulators
• Tapered quantum cascade lasers operating at 9.0μm
• A 4 W K-band GaAs MMIC power amplifier with 22 dB gain
• A 4 GHz quadrature output fractional-N frequency synthesizer for an IR-UWB transceiver
• A wideband frequency synthesizer for a receiver application at multiple frequencies
• A low power wide-band CMOS PLL frequency synthesizer for portable hybrid GNSS receiver
• A millimeter-wave monolithic doubly balanced diode mixer
• A low power 12-b 40-MS/s pipeline ADC
• A 2.5-Gb/s fully-integrated,low-power clock and recovery circuit in 0.18-μm CMOS
• Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions
• GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution
• Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors