Journal of Semiconductors(2010年04期)
半導(dǎo)體學(xué)報(英文版)

目 錄

• Residual impurities and electrical properties of undoped LEC InAs single crystals
• P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn_3N_2:Ga
• Properties of the ITO layer in a novel red light-emitting diode
• Ti/WSi/Ni ohmic contact to n-type SiCN
• An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure
• Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor
• AIGaN/GaN double-channel HEMT
• The microwave large signal load line of an InGaP HBT
• EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy
• Low-field mobility and carrier transport mechanism transition in nanoscale MOSFETs
• Total ionizing dose effects and annealing behavior for domestic VDMOS devices
• A new SOI high voltage device based on E-SIMOX substrate
• RF CMOS modeling:a novel empirical large-signal model for an RF-MOSFET
• A novel CMOS charge-pump circuit with current mode control 110mA at 2.7V for telecommunication systems
• Low power CMOS preamplifier for neural recording applications
• A novel SOI MOSFET electrostatic field sensor
• A high speed sampler for sub-sampling IR-UWB receiver
• A 3-5GHz CMOS UWB power amplifier with±8ps group delay ripple
• A high-speed and high-resolution CMOS comparator with three-stage preamplifier
• A full asynchronous serial transmission converter for network-on-chips
• Design and research of an LED driving circuit with accurate proportional current sampling mode
• A novel charge pump drive circuit for power MOSFETs
• Fast statistical delay evaluation of RC interconnect in the presence of process variations
• Mixed-integrator-based bi-quad cell for designing a continuous time filter
• Design of 20-44 GHz broadband doubler MMIC