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Journal of Semiconductors(2011年07期)
半導(dǎo)體學(xué)報(bào)(英文版)

  • 基本信息
  • 半導(dǎo)體學(xué)報(bào)(英文版);半導(dǎo)體學(xué)報(bào);Chinese Journal of Semiconductors

    中國(guó)科學(xué)院半導(dǎo)體研究所;中國(guó)電子學(xué)會(huì)

    月刊

  • 1674-4926

    11-5781/TN

    北京市

    英文;

    大16開

    2-184

    1980

  • 出版信息
  • 信息科技

    無線電電子學(xué)

    9844篇

  • 1044468次

    41844次

  • 評(píng)價(jià)信息
  • 1.045

    0.78

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    1992年(第一版),1996年(第二版),2000年版,2004年版,2008年版

    中科雙效期刊;中國(guó)科技期刊卓越行動(dòng)計(jì)劃入選項(xiàng)目;中國(guó)最具國(guó)際影響力學(xué)術(shù)期刊;

目 錄

  • Photoconductive properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag cell
  • Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC
  • Effect of current on the microstructure and performance of (Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material via field activated and pressure assisted sintering
  • Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET
  • New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs
  • Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models
  • Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime
  • A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement
  • A new high voltage SOI LDMOS with triple RESURF structure
  • Simulation study of new 3-terminal devices for high speed STT-RAM
  • Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates
  • Sensitivity of MEMS microwave power sensor with the length of thermopile based on Fourier equivalent model
  • A novel structure of silicon-on-insulator microring biosensor based on Young‘s two-slit interference and its simulation
  • A sub-sampling 4-bit 1.056-GS/s flash ADC with a novel track and hold amplifier for an IR-UWB receiver
  • A 50 MHz-1 GHz high linearity CATV amplifier with a 0.15μm InGaAs PHEMT process
  • A wideband CMOS VGLNA based on single-to-differential stage and resistive attenuator for TV tuners
  • A low noise high efficiency buck DC-DC converter with sigma-delta modulation
  • A pseudo differential Gm-C complex filter with frequency tuning for IEEE802.15.4 applications
  • Design of a total-dose radiation hardened monolithic CMOS DC-DC boost converter
  • Design of a high performance CMOS charge pump for phase-locked loop synthesizers
  • A 9.8-mW 1.2-GHz CMOS frequency synthesizer with a low phase-noise LC-VCO and an I/Q frequency divider
  • Reducing test-data volume and test-power simultaneously in LFSR reseeding-based compression environment
  • On modeling the digital gate delay under process variation
  • A novel high reliability CMOS SRAM cell
  • A radiation-hardened SOl-based FPGA
  • A process-insensitive thermal protection circuit
  • Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices
  • Effect of alkaline slurry on the electric character of the pattern Cu wafer
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