Journal of Semiconductors(2011年12期)
半導(dǎo)體學(xué)報(英文版)

目 錄

• MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations
• MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities
• A kind of magnetron cavity used in rubidium atomic frequency standards
• Neurocomputing van der Pauw function for the measurement of a semiconductor‘s resistivity without use of the learning rate of weight vector regulation
• Peltier effect in doped silicon microchannel plates
• Influence of morphologies on the field emission performance of oriented ZnO nano-arrays
• Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength
• In situ nanoscale refinement by highly controllable etching of the(111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire
• Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator
• Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing
• A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
• Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs
• A novel high-voltage device structure with an N~+ ring in substrate and the breakdown voltage model
• Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch
• A novel 2-T structure memory device using a Si nanodot for embedded application
• Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants
• A dual-mode analog baseband with digital-assisted DC-offset calibration for WCDMA/GSM receivers
• A transformer-loaded receiver front end for 2.4 GHz WLAN in 0.13μm CMOS technology
• A new low-voltage and high-speed sense amplifier for flash memory
• A novel power amplifier structure for RFID tag applications
• Harmonic-suppressed quadrature-input frequency divider for OFDM systems
• A 5 GHz 7.2 dB NF low power direct conversion receiver front-end with balun LNA
• Continuous time sigma delta ADC design and non-idealities analysis
• A low power mixed signal DC offset calibration circuit for direct conversion receiver applications
• A 750 MHz semi-digital clock and data recovery circuit with 10~(-12) BER
• 12.5 Gbps 1:16 DEMUX IC with high speed synchronizing circuits
• Improvement of the field emission properties of carbon nanotubes by CNT/Fe_3O_4 composite electrophoretic deposition
• Wafer back pressure control and optimization in the CMP process
• Journal of Semiconductors Volume 32 2011 CONTENTS
• Author Index to Volume 32