SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

摘要： <正>By means of analyzing theⅠ-Ⅴcharacteristic curve of NiSi/n-Si Schottkyjunction diodes(NiSi/n-Si SJDs), abstracting the effective Schottky barrier height(φ_(B,eff)) and the idealfactor ofNiSi/n-Si SJDs and measuring the sheet resistance of NiSi films(R_(NiSi)),we study the effects of different dopant segregation process parameters,including impurity implantation dose,segregation annealing temperature and segregation annealing time,on theφ_(B,eff) of NiSi/ n-Si SJDs and the resistance characteristic of NiSi films.In addition,the changing rules ofφ_(B,eff) and R_(NiSi) are discussed. （共6頁）